Abstract
The effect of temperature variation on barrier height of a GaAs planar doped barrier (PDB) diode has been investigated. Measurements show that the barrier height of such a device increases with increasing temperature, by the rate of 0.25 to 0.3 meV/K for the temperature range 200–360 K. Although it has been theoretically predicted (by Kearney, Dale and colleagues) that the PDB diode has a positive temperature coefficient, this is understood to be the first time that such prediction has been verified experimentally.
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