Abstract
The electrical isolation in multi-layer GaAs planar doped barrier diode (PDBD) structures produced by proton bombardment was investigated. 250 keV proton implants were performed at doses of 5/spl times/10/sup 14/ cm/sup -2/ and 1/spl times/15 cm/sup -2/. RTA annealing test were conducted from 50 to 500/spl deg/C. It was found that the optimum annealing temperature is around 200/spl deg/C, corresponding to a maximum sheet resistance R/sub sh/ of 3/spl times/10/sup 8/ /spl Omega//sq in the sample irradiated to a dose of 1/spl times/10/sup 15/ cm/sup -2/. The results indicate that for a single bombardment of a PDBD layer structure, very high R/sub sh/ was achieved. However, in both samples, R/sub sh/ starts to decrease at relatively lower annealing temperature comparing with a single GaAs sample bombarded with the same condition. Another annealing test was conducted on the sample irradiated to a dose of 1/spl times/10/sup 15/ cm/sup -2/, after removing the surface layer by etching to a depth of 0.23 /spl mu/m. The thermal stability of the isolation improved to 400/spl deg/C.
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