Abstract
A high tangential signal sensitivity (TSS) zero-bias GaAs planar doped barrier (PDB) diode for microwave and millimeter-wave power detection applications is presented. The fabricated PDB diodes have shown 4 dB better TSS at 35 GHz than that of reported devices, considerably increasing the minimum detectable power and widening the dynamic range. The high TSS was obtained by optimizing the PDB layer structures, namely, the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$delta$</tex> -doped <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$hboxp^++$</tex> layer and the two intrinsic layers, and by employing ion bombardment to better define the device and reduce parasitic effects. The isolation properties of ion bombarded epitaxial layers on GaAs substrates were examined and optimized to have a sheet resistivity of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$hbox10^8~Omega/hboxsq$</tex> . The temperature dependence of the barrier height of the PDB diode has been investigated experimentally, showing positive temperature coefficient and, hence, better thermal stability. We have also defined the critical barrier height and derived its analytical expression, which gives the theoretically lowest possible barrier height of a PDB diode.
Published Version
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