Abstract
Abstract This work demonstrates the monolithically integration of NEMS structures in a commercial CMOS technology. Low voltage operating switches (5 V) have been obtained thanks to the definition of a small structure (1.5 μm length, 500 nm width) and a small gap (27 nm), using the MIM module of an analog CMOS technology (AMS 0. 35 μm). In this way NEMS can be fabricated taking advantage of the robust and reproducible CMOS fabrication process.
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