Abstract

Abstract This work demonstrates the monolithically integration of NEMS structures in a commercial CMOS technology. Low voltage operating switches (5 V) have been obtained thanks to the definition of a small structure (1.5 μm length, 500 nm width) and a small gap (27 nm), using the MIM module of an analog CMOS technology (AMS 0. 35 μm). In this way NEMS can be fabricated taking advantage of the robust and reproducible CMOS fabrication process.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.