Abstract
Experimental evidence is presented in support of a recent suggestion by Baraff, Kane, and Schl\uter that the isolated lattice vacancy in silicon is an Anderson negative-$U$ system. The second donor level (+/++) (of charge state + if defect level is occupied by an electron; ++, if unoccupied) is located at ${E}_{v}+0.13$ eV, above a first donor level (0/+) at ${E}_{v}+0.05$ eV. Evidence is presented that interstitial boron has negative-$U$ properties with a single donor level (0/+) at ${E}_{c}\ensuremath{-}0.13$ eV, above a single acceptor level (-/0) at ${E}_{c}\ensuremath{-}0.45$ eV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
