Abstract
High voltage power semiconductor requires higher polyimide insulation properties. We have designed a polyimide with high thermal stability, high light transparency and alkali dissolvable polyimide that is capable of passivating thick layer of polyimide with large topographys. A novel negavitve-tone photo-definable polyimide was formulated with cross linking reagent that can easily decompose during cure and a photo-initiator that initiates well during lithography. Our novel Negative photo sensitive polyimide, PSPI-1, has a patternable capability up to 16 mm thickness on silicon with 350 mj/cm2. PSPI-1 showed higher patternability than of the conventional polyimide. The cured film showed excellent properties as follows: 310C glass transition temperature (Tg), 500C 5% weight loss temperature, 40% elongation, no short observation during bias-HAST (130C. 96%, 100hr, 100V 15/30 mm line & space) and good adhesion to Si and Cu substrates. These results indicated a possibility for this novel PSPI-1 to be applicable for passivating power semiconductor.
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