Abstract
A physical mechanism of electrical instability in the terahertz frequency range is explored in a nanoscale two-terminal configuration of nitride-based structures under a high-field transport regime. The investigated instability utilizes the negative differential resistance effect that is known to occur in bulk group-III nitride semiconductors. A distinctive feature of the proposed mechanism for terahertz generation is that the diode steady-state I-V characteristics maintain a positive differential resistance for a stable operation, while the small-signal response provides negative impedance within the desired frequency range. An additional advantage is that the frequency window of negative small-signal impedance can be tuned electrically.
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