Abstract

Recently, the negative differential thermal resistance effect was discovered in a homojunction made of a negative thermal expansion material, which is very promising for realizing macroscopic thermal transistors. Similar to the Monte Carlo phonon simulation to deal with grain boundaries, we introduce positive temperature-dependent interface thermal resistance in the modified Lorentz gas model and find negative differential thermal resistance effect. In the homojunction, we reproduce a pair of equivalent negative differential thermal resistance effects in different temperature gradient directions. In the heterojunction, we realize the unidirectional negative differential thermal resistance effect, and it is accompanied by the super thermal rectification effect. Using this new way to achieve high-performance thermal devices is a new direction, and will provide extensive reference and guidance for designing thermal devices.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.