Abstract
In a low current region (∼100μA) within a narrow voltage near the onset of primary breakdown, a negative resistance effect has been observed in a 4 kV high-voltage Zener diode. The region is much lower than ihe secondary breakdown region (∼ 100 mA) where negative resistance phenomena have previously been reported for Zener diodes. Measured I—V and oscillation characteristics of high-and low-voltage (<200 V) Zener diodes in the low current region are described, confirming the presence of negative resistance.
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