Abstract
In this paper, ISE-TCAD, a device simulation software, is used to carry out simulation experiments on silicon-based trench MOS Schottky (TMBS) diodes with different trench dimensions under the condition of forward biases and obtain a series of experiment data associated with the negative resistance. Simulation results show that TMBS diodes under forward biases produce the negative resistance effect. The negative resistance effect intensifies linearly with the increase of mesa width and mitigates wavily with the increase of trench depth. The coupling effect of trench oxidization layer on electric field attenuates the change in device field strength, leading to the fact that TMBS devices present a weaker negative resistance effect than trench barrier Schottky (TBS) diodes which have the same parameters, but are free of oxidization layer. The study result provides a feasible basis for the effective application of TMBS negative resistance features to the design and production of corresponding semiconductor devices and circuits.
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