Abstract
The negative magneto-resistance has been studied in a small open cavity made by a Si delta doped GaAs. The weak localization (WL) regime has been found and the phase coherence length of the order of 120nm was determined. The deviation from the WL regime was found out if the wire widths connected to the electrodes were nearly equal to or less than the coherence length. The results suggest that we have succeeded in choosing a particular path of the percolation transport in the cavity.
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