Abstract
The magnetoresistance of a Si : Sb δ-doped layer has been measured in magnetic fields up to 3.4 T. The results have been compared with those for a heavily doped bulk sample. The portion of the occupation of Sb in δ-doped layer is 0.11 monolayer. We have observed the positive magnetoresistance in the perpendicular weak magnetic fields arising from the weak anti-localization due to spin–orbit interaction for the first time in this system. The ratio of spin–orbit scattering time to inelastic scattering time is fairly large compared with that of the metallic thin films which include heavy elements. When the moderate magnetic field is applied perpendicularly to the layer, the negative magnetoresistance appears. On the other hand, the positive one is observed in parallel fields. The comparative analyses are performed between the two kinds of samples within the framework of weak localization theories.
Published Version
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