Abstract
ABSTRACTTwo-dimensional (2D) Si quantum dot array was fabricated by oxidation of microcrystalline Si film deposited by photo chemical vapor deposition (photo-CVD). Average size of Si quantum dot was estimated to be 2.4nm and dot density 7 ∼ 8 ×1011cm−2. Nanocrystal memory device with this 2D quantum dot array demonstrated negative differential resistance characteristics and single charge tunneling phenomena, which was observed as stepwise decrease of gate transconductance. Interface states at the oxidized surface of quantum dots were assumed to explain temperature dependence characteristics. This new process is adequate for functional device application of nanocrystal metal-oxide-semiconductor (MOS) memory.
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