Abstract
The nanocrystalline Si quantum dot (nc-Si QD) stacking MOS structure is fabricated by plasma-enhanced chemical vapor depositon (PECVD). Negative differential resistance (NDR) characteristics are investigated in the nc-Si quantum dot floating gate MOS structure. Clear multi NDR peaks for electrons and holes are observed in the I-V curves and calculations indicate that these NDR characteristics should be associated to Coulomb blockade effect and quantum confinement effect of the nc-Si quantum dots.
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