Abstract
There have been investigated reactive properties of silicon avalanche photodiodes (MAPD- Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f= (50-500) kHz.By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becoming the negative capacitance (equivalent inductance).The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at Ufor= 1,0 V (f=500 kHz). There has been calculated difference in phase j appearing between current and voltage and it is shown that at Ufor=0 V the j = 80o and passes through the zero at Ufor = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: European Journal of Engineering and Technology Research
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.