Negative Bias Temperature Instability of Bulk Fin Field Effect Transistor

Abstract

We investigated the negative bias temperature instability (NBTI) of bulk fin field effect transistor (FinFET) for the first time. Because bulk FinFET has a body terminal, it is more flexible in studying NBTI characteristics than a silicon on insulator (SOI) FinFET (no body terminal). The dependence of NBTI on back bias is smaller in 100 nm bulk FinFET with a fin width of 30 nm than in conventional planar channel devices. The bulk FinFET with the side surface orientation of (100) showed better NBTI than the device with the orientation of (110). The fin width variation has little impact on the NBTI of bulk FinFET. Moreover, the device with longer channel showed less degradation.