Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET

Soohyun Kim,Jae Woo Lee,Bertrand Parvais,Romain Ritzenthaler,Hans Mertens,Thomas Chiarella,Naoto Horiguchi,Jerome Mitard,Doyoung Jang,Jungchun Kim

doi:10.3390/app10082979

Soohyun Kim, Jae Woo Lee + Show 8 more

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https://doi.org/10.3390/app10082979

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Journal: Applied Sciences	Publication Date: Apr 24, 2020
Citations: 16	License type: CC BY 4.0

Affiliation: Korea University, IMEC, Vrije Universiteit Brussel

Abstract

The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25–125 °C). A similar temperature dependence of threshold voltage (VTH) and subthreshold swing (SS) is observed for both devices. However, effective mobility (μeff) shows significant differences of temperature dependence between GAA NW-FET and FinFET at a high gate effective field. At weak Ninv (= 5 × 1012 cm2/V∙s), both GAA NW-FET and FinFET are mainly limited by phonon scattering in μeff. On the other hand, at strong Ninv (= 1.5 × 1013 cm2/V∙s), GAA NW-FET shows 10 times higher dμeff/dT and 1.6 times smaller mobility degradation coefficient (α) than FinFET. GAA NW-FET is less limited by surface roughness scattering, but FinFET is relatively more limited by surface roughness scattering in carrier transport.

Highlights

For several years, fin field effect transistors (FinFETs) have been used industry to continue CMOS down-scaling
We investigated the high temperature characteristics of vertical 2-stacked n-channel
We investigated the high temperature characteristics of vertical 2-stacked nmetal oxide semiconductor (NMOS)(NMOS)

Summary

Introduction

Fin field effect transistors (FinFETs) have been used industry to continue CMOS down-scaling. As FinFETs have been look forward to being further scaled, critical issues such as drain-induced barrier lowering, threshold voltage (VTH ) roll-off and parasitic resistance occur, etc. In order to alleviate these issues, the gate-all-around nanowire field effect transistors The electrical characteristics of semiconductors such as band gap [9], carrier density [10], mobility [11], velocity saturation [12], VTH [13], and leakage current [14] depend strongly on the temperature resulting in a change of circuit performance as a function of the operating temperature. It is important to explore the possible degradation at a high temperature which might lead to performance degradation

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Discussion

Conclusion