Negative bias temperature instability (NBTI) of bulk FinFETs

Abstract

We investigated the negative bias temperature instability (NBTI) of bulk FinFETs for the first time. Since the bulk FinFET has a body terminal, it is more flexible in studying the NBTI characteristics than the SOI FinFET (no body terminal). The dependence of NBTI on the back bias is smaller in a 100 nm bulk FinFET with a fin width of 30 nm than in conventional planar channel devices. The bulk FinFET with a side surface orientation of (100) showed better NBTI than the device with an orientation of [110]. The fin width was shown to have little impact on NBTI in the bulk FinFET. Moreover, the device with longer channel showed less degradation.