Negative bias temperature instability in SOI and body-tied double-gate FinFETs

Abstract

Negative bias temperature instability (NBTI) characteristics of SOI and body-tied FinFETs are reported for the first time. Both FinFETs show better immunity to NBT stress at a wide fin width (channel thickness) than at a narrow fin width, while the narrow fin FinFET is more robust to hot-carrier injection (HCI) stress. A body-tied FinFET is more stable in response to NBT stress than a SOI FinFET because of non-floating body effects. CMOS lifetime is more degraded by NBT stress than by HCI stress at a narrow fin width and a low operational voltage.