Abstract
Reliability characteristics are investigated in CMOS multi-gate FinFETs. Hot-carrier injection (HCI) is crucial in NMOS and negative bias temperature instability (NBTI) is important in PMOS. Series resistance plays a key role in governing the device degradation in NMOS by HCI. The static and dynamic NBTI characteristics on both SOI and body-tied PMOS FinFETs were studied, and the device degradation due to NBTI is more significant in a narrow fin device and a SOI FinFET
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