Abstract
The authors present the results of the modeling and epitaxial growth of a nearly lattice matched Zn1-zCdzSe/Zn1-xCdxSe/Zn1-yMgySe quantum well (QW) heterostructure with yellow emission. The ZnCdSe QW is composed of regions with two different Cd content: in the center, seven monolayers of Zn1-zCdzSe with z Cd content are surrounded on each side by eight Zn1-xCdxSe monolayers with x Cd content (z > x). These last regions are lattice matched to the Zn1-yMgySe barrier. The quantum well design and modeling was based on calculations employing the transfer matrix method. The ZnCdSe quantum well layers were grown in a layer-by-layer mode by submonolayer pulsed beam epitaxy within ZnMgSe barriers grown by molecular beam epitaxy. The low temperature photoluminescence spectrum presented yellow excitonic emission at 2.176 eV, which is in very good agreement with the model calculations. At room temperature, the emission shifted to 2.112 eV, a deep yellow color.
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