Abstract
Optical and structural properties of ZnCdSe quantum wells (QWs) grown by either migration-enhanced epitaxy (MEE) or molecular beam epitaxy (MBE) have been compared. Firstly the QWs are grown by depositing Zn and Cd at the same time during MEE. These samples exhibit significantly lower Cd concentrations than samples grown by MBE with similar Cd fluxes. Compared to MBE grown samples with similar low Cd concentrations neither photoluminescence (PL) nor high-resolution transmission electron microscopy (HRTEM) reveal significant differences in the optical and structural properties, respectively. Secondly the QWs are grown as a digital alloy by depositing CdSe and ZnSe by turns. In this case typical PL spectra show line widths as narrow as 16 meV which means a reduction of about 10 meV compared to typical values from MBE grown samples. By means of HRTEM this could be correlated to improved interfaces and a better composition homogeneity.
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