Abstract
A numerical technique has been used to solve the carrier transport equations for n +-p and p +- n InAs 1 − x Sb x (0 ≤ x ≤ 0.40) (InAsSb) photodiode configurations operating near room temperature. The model calculates the spatial distribution of the electric field, the electron and hole concentrations and the generation-recombination mechanisms. Also the effect of doping profiles on the photodiode parameters ( R 0 A product, detectivity) is analyzed. It is shown that the theoretical performance of high temperature InAsSb photodiodes is comparable to that of HgCdTe photodiodes. The R 0 A product is controlled by a diffusion limited mechanism. This fact together with some advantages of InAsSb in comparison with HgCdTe indicates that InAsSb is a potential competitor to HgCdTe as material for intrinsic detectors in the 3–5 and 8–12 μm spectral range.
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