Abstract
A numerical technique has been used to solve the carrier transport equations for n+- p PbS, PbSe, and PbTe photodiode configurations. The model computes the spatial distribution of the electric field, electron and hole concentrations, and the generation- recombination mechanisms. Also the effect of doping profiles on the photodiode parameters (RoA product, quantum efficiency) is analyzed. Results of calculations indicate the potential possibilities of constructing higher quality photodiodes. The RoA product of experimentally measured PbS, PbSe, and PbTe photodiodes at low temperatures is controlled by Shockley-Read-Hall generation-recombination mechanism. In the range of higher temperatures, the influence of auger generation-recombination mechanism is also appreciable.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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