Abstract
Near-infrared radiation of wavelength 1.5 μm is up-converted to a visible wavelength of 818 nm by internal photoemission in a Schottky diode with a modulation p-doped channel. The near-infrared light incident upon the metal–semiconductor interface excites electrons from the metal into the semiconductor. The electrons then drift into the quantum well where they recombine radiatively, producing luminescence at the shorter wavelength of 818 nm. The intensity of the luminescence is strongly dependent on bias, and turns on at a forward bias of −0.7 V.
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