Abstract
The authors demonstrate a two-dimensional array of Si-integrated photodetectors equipped with readout electronics and operating in the near infrared. The chip is realized in polycrystalline Ge on a silicon complementary metal oxide semiconductor circuitry and includes 512pixels, 64 analog to digital converters, dark current cancellation, and test/calibration facilities. They describe its design, fabrication, characterization, and operation as a near-infrared image sensor.
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