Abstract
Negative Bias Temperature Instability (NBTI) is an important reliability problem in deep submicron PMOSFETs. In this paper, we review the recent literature on the possible theoretical foundations and experimental features of NBTI degradation. These features, including temperature activation energy, recovery and SILC under NBTI, actually reflect the different aspect of the same physics mechanism of NBTI. These findings are expected to provide new evidences for understanding the matter.
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