Abstract
Negative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors (p-FETs) with diamond-like carbon (DLC) liner stressor having ultrahigh compressive stress (~ 5 GPa) are investigated for the first time. Ultrafast measurement was employed for NBTI study. Power law slopes ranging from ~ 0.058 to ~ 0.072 are reported here. P-FETs with higher channel strain show greater threshold voltage shift (DeltaV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) and transconductance degradation than those with lower or no channel strain under the same NBT stress condition V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">stress</sub> . Strained p-FETs with Si S/D and DLC stressors are projected to have an NBTI lifetime of ten years at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> = -0.99 V using E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</sub> power law lifetime extrapolation model or at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> = -0.76 V using the exponential V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">stress</sub> model.
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