Abstract
A novel fabrication technique for fabricating metal/oxide-based electron devices was investigated using an atomic force microscope (AFM) nano-oxidation process. This technique was applied to the surface modification of niobium (Nb) thin films. Successful surface oxidation of Nb was performed by applying a negative bias voltage to a conductive cantilever. Ultra-narrow Nb oxide wires could be obtained by precisely adjusting oxidation parameters such as scanning speeds and applied bias voltages. Using this technique, planar-type metal/insulator/metal (MIM) diodes with a Nb/Nb oxide system were fabricated. Nb-based MIM diodes clearly showed nonlinear current-voltage ( I-V ) characteristics. Furthermore, the electrical properties of Nb/Nb oxide junctions were studied in detail using MIM diode structures. From the temperature dependence of I-V characteristics on the MIM diodes, a barrier height of 133 meV and a relative dielectric constant of 64 were obtained in the single-junction Nb/Nb oxide system.
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