Abstract
Summary form only given. We present the fabrication and characterization results of metal-based single electron transistors (SETs) with niobium (Nb)/Nb oxides system, Several types of ultra-small tunnel junction devices, which include diodes with double and triple junctions and SETs with side gate structure, were fabricated by atomic force microscope (AFM) nano-oxidation process. Clear single-electron charging effects such as Coulomb gap, Coulomb staircase and Coulomb oscillation characteristics were observed at about 100 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
