Abstract
Nb and Al films have been deposited under the high-density plasma using facing target sputtering applied with DC power. An SiO2 film has been also deposited using facing target sputtering applied with RF power. We have obtained an damage-less SiO2 film with good surface smoothness and uniformity under the high deposition rate condition. Fabricated Nb/AlOx–Al/Nb junction indicated the I–V characteristics with small sub-gap leakage current in spite of having no a substrate water-cooled mechanism in the sputtering system. We think it is effective for the facing target sputtering technique to obtain the junction with small sub-gap leakage current, because the γ electrons generated in the plasma are retained and reciprocated between a pair of targets and those hardly do damage to the junction interface during the deposition.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
