Abstract
Nb and Al films in the Nb/Al-AlOx-Al/Nb junction structure have been deposited using facing target sputtering applied with DC power. In this sputtering system, the γ electrons generated in the plasma are retained and reciprocated between a pair of targets and those hardly do damage to the junction interface during the deposition. An SiO2 film has been also deposited using the same sputtering applied with RF power. An anodization process is used for the fabrication process. Fabricated junctions have indicated the I-V characteristics with small sug-gap leakage current (0.11 pA/µm2 at 0.49 K). We think it is effective for both the facing target sputtering technique and the anodization process to obtain the junction with small sub-gap leakage current.
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