Abstract
Niobium oxide (Nb2O5) is widely used in optical and electrical fields because of its high refractive index, wide band gap, high laser-induced damage threshold (LIDT) and high transparency in the ultraviolet to middle-infrared-wavelength range (0.35–7 μm). In this study, Nb2O5 films with different crystalline phases were successfully prepared on BK7 and Si substrates through electron beam evaporation (EB) and post-annealing. Based on the results of X-ray diffraction (XRD) and Raman spectroscopy analysis, the impact of the post-annealing technique on the structure, and optical and physical properties of Nb2O5 films was thoroughly discussed at the molecular level. The crystal phase of an Nb2O5 film and its molecular bonds considerably affect its properties. The Nb2O5(-12 1 2) film prepared in this study exhibited a higher LIDT (17.72 J/cm2) and a higher RMS (0.447 nm) than the corresponding films prepared in previous studies. Following the post-annealing process, the band gap and refractive index of the prepared films were significantly higher than those of the as-deposited film. Thus, this study has significant guiding implications for Nb2O5 film applications and the development costs of the films.
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