Abstract
Wafer-scale Mesoporous GaN (MP-GaN) distributed Bragg reflectors (DBRs) with high reflectivity (>99 %) are prepared by electrochemical etching, and then are used as the substrate in growth of large-area europium (Eu) doped Ga2O3 thin films via the pulsed laser deposition (PLD) technology. X-ray diffraction analysis shows that all Ga2O3 thin films with different doping concentration have monoclinic β-Ga2O3 structures with [−201] orientation. The angle of β-Ga2O3 (−201) peak decreases as Eu contents increases, which is due to the fact that Eu3+ substituting for Ga3+ rises the lattice constant of β-Ga2O3. With the increase of Eu doping, the photoluminescence (PL) of the Ga2O3 thin film is enhanced. The epitaxial relationship is β-Ga2O3 (−201) || GaN (0001) with β-Ga2O3 [010] || GaN [-12-10]. Compared to the sample without DBRs, wafer-scale Ga2O3 thin films with MP-GaN DBRs exhibit a markedly increased PL intensity, which is attributed to improved internal quantum efficiency (IQE) of Ga2O3 thin films and enhanced light extraction efficiency (LEE) related to the light reflection effect of MP-GaN DBRs.
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