Abstract
High photoluminescence (PL) efficiency InGaN/GaN multiple quantum well (MQW) active layers have been fabricated by metalorganic chemical vapor deposition (MOCVD) and followed by electrochemical (EC) etching. The MQW active layers were embedded nanoporous GaN (NP-GaN) distributed Bragg reflectors (DBRs). The PL intensity of MQW structure on the NP GaN mirror was several times higher than for as-grown sample, which should be attributable to improved light extraction efficiency (LEE) due to the increased light-extracting surface area and buried DBR mirror, and improved internal quantum efficiency (IQE) due to the relaxation of strain in the MQWs embedded in the NP-GaN DBRs.
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