Abstract
Data are presented on the room-temperature continuous (cw) operation of native-oxide single-stripe AlxGa1−xAs-GaAs quantum well heterostructure (QWH) lasers. The device quality native oxide is produced by the conversion of high Al composition AlxGa1−xAs (x∼0.8) confining layers via H2O vapor oxidation (400 °C) in a N2 carrier gas. The 10-μm-wide cw 300 K QWH lasers, which are fabricated by simplified processing, have excellent spectral quality and have been operated to powers in excess of 100 mW per facet.
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