Abstract
Phase change superlattice is one of the emerging material technologies for ultra-low power phase change memories. However, the resistance switching mechanisms of phase change superlattice are still hotly debated. Besides interfacial crystalline phase change and bulk crystalline-to-amorphous phase change, the possibility of filamentary switching cannot be ruled out. Here, we study the atomic and electronic structures of Te and Sb native filaments embedded in the host Ge2Sb2Te5 superlattices. Te and Sb have compatible structures to Ge2Sb2Te5 superlattice with lower band gap values. In addition, the filament-to-dielectric interfaces can inherently be carrier excessive. These indicate that Te or Sb filament is likely to form and leads to considerable decrease of the resistance locally.
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