Abstract
Cathodoluminescence investigations on bulk undoped semi-insulating GaAs samples taken from different sources reveal the presence of a deep level emission at 0.9 eV at 77 K, with a narrow full width at half maximum of 8 meV. The temperature-dependent and beam-parameter-dependent studies indicate that, the probable origin for this emission may be some nanocluster/quantum-dot like structures with a band gap of 0.9 eV, present inside the semi-insulating GaAs crystal lattice. One possibility for such structures in semi-insulating GaAs are clusters/nanoprecipitates of arsenic.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
