Abstract
Nanoscale surface topography evolution on Ge surfaces irradiated by 1 keV Kr+ ions is examined in both directions perpendicular and parallel to the projection of the ion beam on the surface. Grazing incidence small angle x-ray scattering is used to measure in situ the evolution of surface morphology via the linear dispersion relation. A transition from smoothing (stability) to pattern-forming instability is observed at a critical ion incidence angle of approximately 62◦ with respect to the surface normal. The linear theory quadratic coefficients which determine the surface stability/instability are determined as a function of bombardment angle. The Ge surface evolution during Kr+ irradiation is qualitatively similar to that observed for Ar+ irradiation of Si. However, in contrast to the case of Si under Ar+ irradiation, the critical angle separating stability and instability for Ge under Kr+ irradiation cannot be quantitatively reproduced by the simple Carter-Vishnyakov mass redistribution model.
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