Growth of Ge on Si(0 0 1) studied in situ by grazing incidence small angle X-ray scattering

Abstract

The growth of Ge/Si(0 0 1) has been followed, in situ, by grazing incidence small angle X-ray scattering (GISAXS). The Stranski–Krastanov transition was monitored at constant temperature of 700 K. It is demonstrated that a post-growth annealing at 900 K modifies the initial rounded shapes of the dots to a well-defined faceted shape. Recording GISAXS for grazing angles smaller and larger than the X-ray critical angle of total reflection shows that the truncation rods of scattering associated with the facets are doubled near the critical angle. This effect can be explained within the framework of the distorted wave Born approximation.