Abstract
Nano-scale silicon MOSFETs with narrow wire channels on SOI substrates are presented. The triangular wire MOSFET can suppress the short channel effect more than double-gate and single-gate SOI MOSFETs. The wire channel MOSFETs narrower than 10 nm exhibit quantum confinement effects at room temperature. New device engineering using quantum effects is also discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
