A high performance double-gate SOI MOSFET using lateral solid phase epitaxy

Haitao Liu Haitao Liu,Sin Sin,Peiqi Xuan Peiqi Xuan,Bokor Bokor,Zhibin Xiong Zhibin Xiong

doi:10.1109/soi.2002.1044403

A high performance double-gate SOI MOSFET using lateral solid phase epitaxy

Haitao Liu Haitao Liu, Sin Sin + Show 3 more

https://doi.org/10.1109/soi.2002.1044403

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Publication Date: Jan 1, 2002

Citations: 3

Affiliation: Hong Kong University of Science and Technology, University of Hong Kong, University of California, Berkeley

#Double-gate MOSFET #Lateral Solid Phase Epitaxy + Show 8 more

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Abstract

We fabricate a double-gate SOI MOSFET using lateral solid phase epitaxy with high dose Si and Ge ion implantation. Device characterization showed that the double-gate MOSFET has superior performance as compared to the single-gate SOI MOSFET in terms of current drive, subthreshold slope, and V/sub t/ roll-off. The effective electron mobility of the LSPE crystallized layer is only 17% lower than that of commercial SOI wafers.

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