Abstract
In this study, the effects of oxygen vacancies on the local poling properties of Bi-layered ferroelectric thin films were examined. Bi3.15Nd0.85Ti3O12 (BNT) thin films were coated on Pt(111)/Ti/SiO2/Si substrates using a sol–gel method. An oxygen vacancy of 2.4±0.5% was observed mainly at the Bi2O22+ layers in the film that annealed in an oxygen-deficient atmosphere. The film containing oxygen vacancies showed a shift in the polarization–electric field hysteresis loop. Contact-mode electrostatic force microscopy revealed a domain pinning behavior in the BNT film with oxygen vacancies. The unpolarized domains were explained by the built-in field formed by the oxygen vacancies in the Bi2O22+ layers.
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