Abstract
ABSTRACT In this paper, thin films of Bi4Ti3O12 (BTO), Bi3.25La0.75Ti3O12 (BLT) and Bi3.15Nd0.85Ti3O12 (BNT) were fabricated on Pt/Ti/SiO2/Si substrates by sol-gel method. The structures and ferroelectric properties of the polycrystalline films are studied and the correlation between substitution and residual stress are discussed in detail. The results show that, the ferroelectric and fatigue properties of the BLT and BNT films are improved greatly, compared with those of the BTO thin film. The Pr values of BLT and BNT are 13.14 and 21.23 μC/cm2, respectively. X-ray diffraction result shows that the measured residual stress is tensile stress for all films. After A-site substitution, the value of tensile stress for the BTO films has increased and the stress value is maximal for the BNT film. The calculated intrinsic residual stress values are 288.4, 418.4 and 608.2 MPa for BTO, BLT and BNT, respectively.
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