Abstract
Nd-substituted bismuth titanate Bi3.54Nd0.46Ti3O12 (BNT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by a sol–gel method. The BNT thin films processed at a low annealing temperature of ∼600 °C showed good ferroelectric properties. The randomly oriented BNT single phases and the improved ferroelectric properties were confirmed by X-ray diffraction and polarization–electric field hysteresis loops, respectively. The remanent polarization of the BNT thin films is 64 μC/cm2, which is larger than that of Bi3.25La0.75Ti3O12 (BLT) thin films. After 1010 read/write switching cycles, the effective non-volatile charges showed no polarization fatigue. Regardless of the low annealing temperature of 600 °C, the BNT thin films had good ferroelectric properties with high remanent polarizations and strong fatigue resistances.
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