Abstract
Jet and flash imprint lithography steppers have demonstrated unprecedented capability for patterning of sub-25-nm features for semiconductor manufacturing. A critical requirement for such patterning is the ability to overlay one layer of a device to a previously printed layer. In this paper, the design and development of a nanoprecision mask magnification/shape control system (MSCS) for the unique requirements of imprint-based overlay is presented. Imprint specific topics such as in-liquid overlay and distortions, and on-tool overlay metrology are discussed. The MSCS presented here has demonstrated 10-nm mix and match overlay (mean + 3 sigma) capability that approaches performance of state-of-the-art photolithography tools.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
