Abstract
Anodic oxidation of Al film on silicon substrate in oxalic acid is investigated through the j– t curves and its photoluminescence (PL). Their growth is analyzed with three typical stages according to j– t curve, which is agreed with the growth of nanoscale SiO 2 islands at the interface between Al film and Si substrate. The violet and blue peaks of PL were due to F + and F centers, respectively. The evolvement from F + to F centers during the late stage of anodization was revealed by the PL behavior at different stage.
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