Abstract
Anodic oxidation of Al film on silicon substrate in oxalic acid is investigated through the j–t curves and its photoluminescence (PL). Their growth is analyzed with three typical stages according to j–t curve, which is agreed with the growth of nanoscale SiO2 islands at the interface between Al film and Si substrate. The violet and blue peaks of PL were due to F+ and F centers, respectively. The evolvement from F+ to F centers during the late stage of anodization was revealed by the PL behavior at different stage.
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