Abstract
Power semiconductor devices are progressing towards high breakdown voltages and are fabricated using wide-band-gap semiconductor materials and parallel integration facilitated by microfabrication techniques. We achieved nanoscale observation of power semiconductor devices by scanning probe microscopy (SPM) based on the combination of atomic force microscopy (AFM), Kelvin probe force microscopy (KFM), and scanning capacitance force microscopy (SCFM), which enabled direct observation of internal structures and channel formation in a silicon carbide double-diffused MOSFET at nanoscale resolution. Nanoscale observations were performed with stability control using the frequency-modulation (FM) detection method in a vacuum-pressure environment, with and without bias voltage applied to the MOSFET.
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