Investigation of power semiconductor devices under applying voltage by multi-purpose scanning probe microscope

Abstract

Power semiconductor devices are progressing towards high-withstand voltage using wide bandgap semiconductor materials as well as having the ability to flow a significant amount of current by multi-parallel integration using the microfabrication technique. A power semiconductor device under a bias voltage applied condition by a scanning probe microscope (SPM) was successfully observed, combined with atomic force microscopy (AFM), Kelvin probe force microscopy (KFM), and scanning capacitance force microscopy (SCFM). Using the SPM analysis, both, a high spatial-resolution and high sensitivity was achieved.